VS-GB150TS60NPBF www.vishay.com vishay semiconductors revision: 10-jun-15 1 document number: 94502 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 int-a-pak half-bridge (ultrafast speed igbt), 138 a features ? generation 5 non punch through (npt) technology ? ultrafast: optimized fo r hard switching speed ?low v ce(on) ? 10 s short circuit capability ? square rbsoa ?positive v ce(on) temperature coefficient ?hexfred ? antiparallel diode wi th ultrasoft reverse recovery characteristics ? industry standard package ?al 2 o 3 dbc ? ul approved file e78996 ? designed for industrial level ? material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 benefits ? benchmark efficiency for ups and welding application ? rugged transient performance ? direct mounting on heatsink ? very low junction to case thermal resistance product summary v ces 600 v i c dc 138 a v ce(on) at 150 a, 25 c 2.64 v speed 8 khz to 30 khz package int-a-pak circuit half bridge int-a-pak absolute maximum ratings parameter symbol test conditions max. units collector to em itter voltage v ces 600 v continuous coll ector current i c t c = 25 c 138 a t c = 80 c 93 pulsed collector current i cm 300 clamped inductive load current i lm 300 diode continuous forward current i f t c = 25 c 178 t c = 80 c 121 gate to emi tter voltage v ge 20 v maximum power dissipation p d t c = 25 c 500 w t c = 80 c 280 isolation voltage v isol any terminal to case, t = 1 min 2500 v operating junction temperature range t j -40 to +150 c storage temperature range t stg -40 to +150
VS-GB150TS60NPBF www.vishay.com vishay semiconductors revision: 10-jun-15 2 document number: 94502 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 electrical specifications (t j = 25 c unless otherwise specified) parameter symbol test conditions min. typ. max. units collector to emitte r breakdown voltage v br(ces) v ge = 0 v, i c = 500 a 600 - - v collector to em itter voltage v ce(on) v ge = 15 v, i c = 100 a - 2.2 2.7 v ge = 15 v, i c = 150 a - 2.64 3 v ge = 15 v, i c = 100 a, t j = 125 c - 2.68 3.11 v ge = 15 v, i c = 150 a, t j = 125 c - 3.25 3.79 gate threshold voltage v ge(th) v ce = v ge , i c = 500 a 3 4.2 6 collector to emitter leakage current i ces v ge = 0 v, v ce = 600 v - 0.01 0.2 ma v ge = 0 v, v ce = 600 v, t j = 150 c - 7.5 15 diode forward voltage drop v fm i c = 100 a - 1.39 1.78 v i c = 150 a - 1.52 1.91 i c = 100 a, t j = 125 c - 1.31 1.72 i c = 150 a, t j = 125 c - 1.49 2.05 gate to emitter leakage current i ges v ge = 20 v - - 200 na switching characteristics (t j = 25 c unless otherwise specified) parameter symbol test conditions min. typ. max. units turn-on switching loss e on i c = 150 a, v cc = 360 v, v ge = 15 v, ? r g = 10 ?? l = 200 h, t j = 25 c -2.0- mj turn-off switching loss e off -3.9- total switching loss e tot -5.9- turn-on switching loss e on i c = 150 a, v cc = 360 v, v ge = 15 v, ? r g = 10 ?? l = 200 h, t j = 125 c -2.42- turn-off switching loss e off -4.2- total switching loss e tot -6.62- turn-on delay time t d(on) - 390 - ns rise time t r - 100 - turn-off delay time t d(off) - 402 - fall time t f -80- reverse bias safe operating area rbsoa t j = 150 c, i c = 300 a, ? r g = 10 ??? v ge = 15 v to 0 fullsquare short circuit safe operating area scsoa t j = 150 c, v cc = 400 v, v p = 600 v, ? r g = 10 ??? v ge = 15 v to 0 10 - - diode reverse recovery time t rr i f = 50 a, di f /dt = 200 a/s, ? v cc = 400 v, t j = 25 c - 226 260 ns diode peak reverse current i rr -1720a diode recovery charge q rr - 1900 2600 nc diode reverse recovery time t rr i f = 50 a, di f /dt = 200 a/s, ? v cc = 400 v, t j = 125 c - 290 330 ns diode peak reverse current i rr -2530a diode recovery charge q rr - 3600 5000 nc
VS-GB150TS60NPBF www.vishay.com vishay semiconductors revision: 10-jun-15 3 document number: 94502 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - typical igbt output characteristics t j = 25 c, t p = 500 s fig. 2 - typical igbt output characteristics t j = 125 c, t p = 500 s fig. 3 - typical transfer characteristics v ce = 20 v, t p = 500 s fig. 4 - typical collecto r to emitter voltage vs. junction temperature v ge = 15 v, 500 s pulse width thermal and mechanical specifications parameter symbol min. typ. max. units operating junction and storage temperature range t j , t stg -40 - 150 c junction to case per leg igbt r thjc - 0.17 0.25 c/w diode - 0.19 0.32 case to sink per module r thcs -0.1- mounting torque case to heatsink - - 4 nm case to terminal 1, 2, 3 - - 3 weight - 185 - g i ce (a) v ce (v) 01234 0 50 100 150 200 vge = 9v vge = 12v vge = 15v vge = 18v i ce (a) 012345 0 50 100 150 200 vge = 9v vge = 18v vge = 15v vge = 12v v ce (v) i ce (a) v ge (v) 012345678 0 20 40 60 80 100 120 140 160 180 200 tj = 25c tj = 125c 0 306090120150 1.5 2 2.5 3 3.5 4 4.5 ic = 200a ic = 75a ic = 150a t j , junction temperature (c) v ce , collector -to-emitter voltage (v)
VS-GB150TS60NPBF www.vishay.com vishay semiconductors revision: 10-jun-15 4 document number: 94502 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - diode forward characteristics, t p = 500 s fig. 6 - maximum collector current vs. case temperature fig. 7 - typical energy loss vs. i c t j = 125 c, l = 200 h, v cc = 360 v, r g = 10 ? , v ge = 15 v fig. 8 - typical switching time vs. i c t j = 125 c, l = 200 h, v cc = 360 v, r g = 10 ? , v ge = 15 v fig. 9 - typical en ergy loss vs. r g t j = 125 c, l = 200 h, v cc = 360 v, i ce = 150 a, v ge = 15 v fig. 10 - typical switching time vs. r g , t j = 125 c, l = 200 h, v cc = 360 v, i ce = 150 a, v ge = 15 v i f (a) v f (v) 0.0 0.5 1.0 1.5 2.0 0 50 100 150 200 tj = 25c tj = 125c 0 40 80 120 160 0 20 40 60 80 100 120 140 160 dc t c , case temperature (c) maximum dc collector current (a) energy (mj) i c (a) 050100150 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 eon eoff switching time (ns) i c (a) 04080120160 10 100 1000 td(off) tr td(on) tf 0 1020304050 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 eon eoff energy (mj) r g ( ) 0 1020304050 10 100 1000 10000 td(off) tr td(on) tf energy time (ns) r g ( )
VS-GB150TS60NPBF www.vishay.com vishay semiconductors revision: 10-jun-15 5 document number: 94502 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 11 - typical diode i rr vs. i f t j = 125 c fig. 12 - typical diode i rr vs. r g t j = 125 c, i f = 150 a fig. 13 - typical diode i rr vs. di f /dt t j = 125 c, v cc = 360 v, i f = 150 a, v ge = 15 v fig. 14 - typical switching losses vs. gate resistance, t j = 125 c, l = 200 h, r g = 10 ? , v cc = 360 v, v ge = 15 v fig. 15 - typical switching loss es vs. junction temperature; l = 200 h, r g = 10 ? , v cc = 360 v, v ge = 15 v fig. 16 - typical switching losses vs. collector to emitter current; t j = 125 c, r g1 = 10 ? , r g2 = 0 ? , v cc = 360 v, v ge = 15 v i rr (a) i f (a) 40 60 80 100 120 140 160 20 30 40 50 60 70 80 90 100 10 ohm 27 ohm 47 ohm 0 1020304050 20 40 60 80 100 i rr (a) r g ( ) 200 400 600 800 1000 1200 1400 50 60 70 80 90 i rr (a) di f / dt (a/s) 0 1020304050 6 7 8 9 10 11 12 13 14 15 16 17 total switching losses (mj) r g ( ) 0255075100125 1 10 ic = 150a ic = 100a ic = 75a total switching losses (mj) t j - junction temperature (c) 04080120160 0 1 2 3 4 5 6 7 8 total switching losses (mj) i c (a)
VS-GB150TS60NPBF www.vishay.com vishay semiconductors revision: 10-jun-15 6 document number: 94502 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 17 - maximum transient thermal im pedance, junction to case (igbt) fig. 18 - maximum transient thermal im pedance, junction to case (hexfred ? ) thermal response (z thjc ) t 1 , rectangular pulse duration (sec) 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 0.001 0.01 0.1 1 single pulse (thermal response) d = 0.02 d = 0.05 d = 0.1 d = 0.2 d = 0.5 d = 0.01 notes: 1. duty factor d = t1/t2 2. peak tj = pdm x zthjc + tc thermal response (z thjc ) t 1 , rectangular pulse duration (sec) 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 0.001 0.01 0.1 1 single pulse (thermal response) d = 0.02 d = 0.05 d = 0.1 d = 0.2 d = 0.5 d = 0.01 notes: 1. duty factor d = t1/t2 2. peak tj = pdm x zthjc + tc
VS-GB150TS60NPBF www.vishay.com vishay semiconductors revision: 10-jun-15 7 document number: 94502 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table circuit configuration links to related documents dimensions www.vishay.com/doc?95543 - insulated gate bipolar transistor (igbt) 2 - b = igbt generation 5 npt 3 - current rating (150 = 150 a) 4 - circuit configuration (t = half-bridge) 5 - package indicator (s = int-a-pak) 6 - voltage rating (60 = 600 v) 8 9 - lead (pb)-free 7 - speed/type (n = ultrafast igbt) device code 5 1 3 2 4 6 7 8 g b 150 t s 60 n pbf 1 - vishay semiconductors product 9 vs- 6 7 1 4 5 3 2
outline dimensions www.vishay.com vishay semiconductors revision: 27-mar-13 1 document number: 95543 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 int-a-pak igbt dimensions in millimeters (inches) 17 (0.67) 23 (0.91) 5 (0.20) 23 (0.91) 14.3 (0.56) 3 screws m5 x 10 66 (2.60) 94 (3.70) 35 (1.38) 14.5 (0.57) 1 2 3 2.8 x 0.8 (0.11 x 0.03) 5 4 7 6 37 (1.44) 80 (3.15) ? 6.5 (? 0.25) 30 (1.18) 9 (0.33) 7 (0.28) 28 (1.10) 29 (1.15)
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